Producing of crystal silicon nanoparticles opens wide prospects for creation of a new generation of compact diodes, optical amplifiers and lasers, which is proved with the work of scientists from the Institute of Laser & Information Technologies Problems, Russian Academy of Sciences. They developed a technology of producing silicon nanocrystals, ordered assembly of these particles on the surface of coating of silicon dioxide as well as of silicon nanoparticles, alloyed with ions of rare-earth elements.
Theoretical analysis of the transfer of energy and radiative processes in such semiconductor structures revealed some unique features. The results gained became the basis for technology of light emitted diodes making within spectral range near 1.54 micron. It is essential that such developed method of making electroluminescent light emitted diodes on the basis of coatings with silicon nanoparticles is compatible with the existing silicon technology.
It may be used, in particular, to increase information transmission rate in microprocessor-based computing devices, where information exchange between SBIS is made through light signals along optical bus.
The work has been performed with the assistance of the Federal Science and Innovation Agency within Federal Specialized Program “Studies and developments along priority directions of Scientific-Technological Complex of Russia development for 2007 — 2012”.
