It is assumed that by the year 2015 switch to new elements of memory on the basis of spintronic devices, so called MRAM (Magnetic Random Access Memory), that will lead to sharp changes of computer devices. For instance, the rate of access to such memory will thousand times higher than of the existing elements of flash-memory, and rewriting resource will be one hundred thousand more.
As a result, we may abandon using hard disc drives for information storage and replace them with the fixed block. As along with electric ones magnetic properties of electrons will be used in spintronic device for information transmission, development of ferromagnetic semiconductors, with the properties of which both electric and magnetic field may be controlled, is required for their creation. All the known materials for spintronics transit into ferromagnetic state at a low temperature: 172 К.
In Kurchatov Institute two new materials in the form of lamellar heterostructure GaAs/InGaAs/GaAs and on the basis of Si and semiconductors A3B5 with quantum wells of ferromagnetic element -Mn. The first structure had rather high temperature of transit into ferromagnetic state: 100 К, but instead had high mobility of carriers equal to 3000 cm2/V. The second structure became ferromagnetic at room temperature already.
Basing on the results received specification for creation of spin transistor prototype has been developed. The studies were conducted with the assistance of the Federal Science and Innovation Agency (within Federal Specialized Program “Studies and developments along priority directions of Scientific-Technological Complex of Russia development for 2007 — 2012”)
